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• W2116826847 endingPage "3565" @default.
• W2116826847 startingPage "3559" @default.
• W2116826847 abstract "It is recognized that the conventional model for metal-ferroelectric-insulator-semiconductor field-effect transistors (MFIS-FETs) always neglects the history-dependent electric field effect of the ferroelectric layer. In this paper, an improved model combining the dipole switching theory with the silicon physics of metal-oxide-semiconductor structures and with Pao and Sah's double integral, respectively, is proposed to describe the capacitance-gate voltage ( <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>C</i> - <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>V</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>G</sub> ) characteristics of MFIS structures and the drain current-gate voltage ( <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>I</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>D</sub> - <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>V</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>GS</sub> ) and drain current-drain voltage ( <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>I</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>D</sub> - <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>V</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>DS</sub> ) characteristics of MFIS-FETs. Close agreement between modeling and experimental results confirms the validity of the improved model. The influence of the gate voltage, SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> layer thickness, and interface layer thickness on the <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>C</i> - <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>V</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>G</sub> , <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>I</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>D</sub> - <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>V</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>GS</sub> , and <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>I</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>D</sub> - <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>V</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>DS</sub> characteristics are simulated and discussed. The memory windows of <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>C</i> - <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>V</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>G</sub> and <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>I</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>D</sub> - <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>V</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>GS</sub> characteristics, as well as the <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>I</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>D</sub> - <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>V</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>DS</sub> characteristics, increase with increasing gate voltage. The thicker the SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> or interface layer, the worse the transistor characteristics. This paper is expected to provide some guidance to the design and performance improvement of MFIS structure devices. In addition, the mathematical description can be easily combined with electronic design automation software for circuit simulation." @default.
• W2116826847 created "2016-06-24" @default.
• W2116826847 creator A5033550729 @default.
• W2116826847 creator A5049863306 @default.
• W2116826847 date "2011-10-01" @default.
• W2116826847 modified "2023-09-23" @default.
• W2116826847 title "Modeling of MFIS-FETs for the Application of Ferroelectric Random Access Memory" @default.
• W2116826847 cites W1631211130 @default.
• W2116826847 cites W1637927769 @default.
• W2116826847 cites W1987992683 @default.
• W2116826847 cites W2005077047 @default.
• W2116826847 cites W2007656487 @default.
• W2116826847 cites W2011895435 @default.
• W2116826847 cites W2014236831 @default.
• W2116826847 cites W2022766288 @default.
• W2116826847 cites W2030916630 @default.
• W2116826847 cites W2033982036 @default.
• W2116826847 cites W2043543200 @default.
• W2116826847 cites W2046229218 @default.
• W2116826847 cites W2058355743 @default.
• W2116826847 cites W2097768755 @default.
• W2116826847 cites W2112553085 @default.
• W2116826847 cites W2126247922 @default.
• W2116826847 cites W2126861694 @default.
• W2116826847 cites W2133256815 @default.
• W2116826847 cites W2139424966 @default.
• W2116826847 cites W3098519115 @default.
• W2116826847 cites W3100727223 @default.
• W2116826847 cites W3103051228 @default.
• W2116826847 doi "https://doi.org/10.1109/ted.2011.2162335" @default.
• W2116826847 hasPublicationYear "2011" @default.
• W2116826847 type Work @default.
• W2116826847 sameAs 2116826847 @default.
• W2116826847 citedByCount "11" @default.
• W2116826847 countsByYear W21168268472014 @default.
• W2116826847 countsByYear W21168268472016 @default.
• W2116826847 countsByYear W21168268472019 @default.
• W2116826847 countsByYear W21168268472020 @default.
• W2116826847 countsByYear W21168268472022 @default.
• W2116826847 countsByYear W21168268472023 @default.
• W2116826847 crossrefType "journal-article" @default.
• W2116826847 hasAuthorship W2116826847A5033550729 @default.
• W2116826847 hasAuthorship W2116826847A5049863306 @default.
• W2116826847 hasConcept C119599485 @default.
• W2116826847 hasConcept C121332964 @default.
• W2116826847 hasConcept C127413603 @default.
• W2116826847 hasConcept C133386390 @default.
• W2116826847 hasConcept C184720557 @default.
• W2116826847 hasConcept C49040817 @default.
• W2116826847 hasConcept C79090758 @default.
• W2116826847 hasConceptScore W2116826847C119599485 @default.
• W2116826847 hasConceptScore W2116826847C121332964 @default.
• W2116826847 hasConceptScore W2116826847C127413603 @default.
• W2116826847 hasConceptScore W2116826847C133386390 @default.
• W2116826847 hasConceptScore W2116826847C184720557 @default.
• W2116826847 hasConceptScore W2116826847C49040817 @default.
• W2116826847 hasConceptScore W2116826847C79090758 @default.
• W2116826847 hasIssue "10" @default.
• W2116826847 hasLocation W21168268471 @default.
• W2116826847 hasOpenAccess W2116826847 @default.
• W2116826847 hasPrimaryLocation W21168268471 @default.
• W2116826847 hasRelatedWork W2085782091 @default.
• W2116826847 hasRelatedWork W2130773548 @default.
• W2116826847 hasRelatedWork W2407791073 @default.
• W2116826847 hasRelatedWork W3013319444 @default.
• W2116826847 hasRelatedWork W3129786422 @default.
• W2116826847 hasRelatedWork W3207448606 @default.
• W2116826847 hasRelatedWork W4308670809 @default.
• W2116826847 hasRelatedWork W4313589316 @default.
• W2116826847 hasRelatedWork W4317214719 @default.
• W2116826847 hasRelatedWork W2182933505 @default.
• W2116826847 hasVolume "58" @default.
• W2116826847 isParatext "false" @default.
• W2116826847 isRetracted "false" @default.
• W2116826847 magId "2116826847" @default.
• W2116826847 workType "article" @default.