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- W2116862788 abstract "ABSTRACT Ga doped ZnO (GZO) films prepared by sputtering at room temperature were rapid thermal annealed (RTA) at elevated temperatures. With increasing annealing temperature up to 570°C, film transmission enhanced significantly over wide spectral range especially in infrared region. Hall effect measurements revealed that carrier density decreased from ∼8 × 10 20 to ∼ 3 × 10 20 cm −3 while carrier mobility increased from ∼15 to ∼28 cm 2 /Vs after the annealing, and consequently low film resistivity was preserved. Hydrogenated microcrystalline Si (µc‐Si:H) and microcrystalline Si 1‐x Ge x (µc‐Si 1‐x Ge x :H, x = 0.1) thin film solar cells fabricated on textured RTA‐treated GZO substrates demonstrated strong enhancement in short‐circuit current density due to improved spectral response, exhibiting quite high conversion efficiencies of 9.5% and 8.2% for µc‐Si:H and µc‐Si 0.9 Ge 0.1 :H solar cells, respectively. Copyright © 2011 John Wiley & Sons, Ltd." @default.
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- W2116862788 date "2011-03-23" @default.
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- W2116862788 title "Enhanced infrared transmission of GZO film by rapid thermal annealing for Si thin film solar cells" @default.
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- W2116862788 doi "https://doi.org/10.1002/pip.1108" @default.
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