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• W2116901323 abstract "We have performed a simulation study of symmetric ultrathin-body double-gate (SUTBDG) devices with metal source/drain (S/D) structures designed for low-operating-power applications. A relatively high S/D Schottky barrier strongly influences the threshold voltages of the devices. The drive current (I/sub ON/) is dominated by barrier tunneling for nonnegative SBHs. Both electrons and holes may contribute to the off-state current (I/sub OFF/). Tunneling from the drain terminal limits the minimum obtainable I/sub OFF/. Germanium channel devices with metal S/D and a given I/sub OFF/ have smaller I/sub ON/ than similar silicon devices. With low nonnegative Schottky barrier heights (SBHs), metal S/D devices can outperform doped S/D devices, if the device performance degradation due to series resistances and parasitic capacitances is taken into account. Based on realistic device design rules, we have determined the upper bounds of S/D SBHs that allow metal S/D devices to offer improved performance over doped S/D devices with different body thicknesses." @default.
• W2116901323 created "2016-06-24" @default.
• W2116901323 creator A5011173573 @default.
• W2116901323 creator A5018019857 @default.
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• W2116901323 date "2005-08-01" @default.
• W2116901323 modified "2023-09-26" @default.
• W2116901323 title "A Comparison Study of Symmetric Ultrathin-Body Double-Gate Devices With Metal Source/Drain and Doped Source/Drain" @default.
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• W2116901323 doi "https://doi.org/10.1109/ted.2005.852893" @default.
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