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• W2117005970 abstract "c-axis epitaxial and polycrystalline Sr3Bi4Ti6O21 (SBTi) thin films were fabricated on (001)SrTiO3 (STO) single-crystal substrates and Pt/Ti2/SiO2/Si substrates respectively, by pulsed laser deposition (PLD). Structures of the films were systematically characterized by x-ray diffraction (XRD), including θ–2θ-scans, rocking curve scans and ϕ-scans, atomic force microscopy and transmission electron microscopy (TEM). The epitaxial orientation relation of the SBTi films on STO is established by selected-area electron diffraction and XRD ϕ-scans to be (001)SBTi ∥ (001)STO, [1 0]SBTi ∥ [010]STO. Cross-sectional high-resolution TEM studies on the epitaxial SBTi film revealed that SBTi is a single-phase material. A special kind of irrational atomic shift along the [001] direction was observed and is discussed in detail. By using an evanescent microwave probe (EMP), the room-temperature dielectric constant of the epitaxial SBTi film was measured to be 211 ± 20. Excellent electrical properties of the polycrystalline SBTi films with Pt bottom and top electrodes were exhibited: the Pr and Ec values were 4.1 μC cm−2 and 75 kV cm−1 respectively, the nonvolatile polarizations decreased by less than 5% after 2.22 × 109 switching cycles and the dielectric constant and loss tangent were 363 and 0.04 at 100 kHz." @default.
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• W2117005970 date "2003-02-18" @default.
• W2117005970 modified "2023-10-18" @default.
• W2117005970 title "Structural and electrical properties of<i>c</i>-axis epitaxial and polycrystalline Sr₃Bi₄Ti₆O₂₁thin films" @default.
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• W2117005970 doi "https://doi.org/10.1088/0953-8984/15/8/307" @default.
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