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• W2117019713 abstract "Wafer-on-wafer stacking is demonstrated successfully using bumpless Cu-Cu bonding for the simultaneous formation of electrical connection, mechanical support, and hermetic frame for 3-D IC application. The ohmic behavior of the Cu-Cu bond is verified. A daisy chain of at least 44 000 contacts at a 15-μm pitch is connected successfully and sustains thermal cycling. Postbonding delamination is found to be strongly affected by the wafer curvature and bond strength. The Cu-Cu hermetic seal ring shows a helium leak rate more than ten times lower than the reject limit (5 × 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-8</sup> atm · cm/s based on MIL-STD-883E standard) without underfill. This provides a robust IC-to-IC connection density of 4.4 × 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>5</sup> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-2</sup> , suitable for future wafer-level 3-D integration." @default.
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• W2117019713 date "2012-06-01" @default.
• W2117019713 modified "2023-10-09" @default.
• W2117019713 title "Three-Dimensional Wafer Stacking Using Cu–Cu Bonding for Simultaneous Formation of Electrical, Mechanical, and Hermetic Bonds" @default.
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• W2117019713 doi "https://doi.org/10.1109/tdmr.2012.2188802" @default.
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