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• W2117083572 abstract "We report on AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor (HFET) over SiC substrates with peripheries from 0.15 to 6 mm. These multigate devices with source interconnections were fabricated using a novel oxide-bridging approach. The saturation current was as high as 5.1 A for a 6 mm wide device with a gate leakage of 1 μA/cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> for 1.5 μm gate length in a 5 μm source-drain opening. The cutoff frequency of around 8 GHz was practically independent of the device periphery. Large-signal output rf-power as high as 2.88 W/mm was measured at 2 GHz. Both the saturation current and the rf-power scaled nearly linearly with the gate width." @default.
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• W2117083572 date "2001-02-01" @default.
• W2117083572 modified "2023-10-09" @default.
• W2117083572 title "Large periphery high-power AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC with oxide-bridging" @default.
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• W2117083572 doi "https://doi.org/10.1109/55.902829" @default.
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