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- W2117222588 abstract "High voltage and high current SiC bipolar diode modules are fabricated and characterized under static and dynamic conditions. The modules are built using 6×6mm2 SiC chips that are fabricated on 3″ SiC substrates. Individual chips were also packaged in an ISOPLUS™ package and used to perform switching tests on the diodes. The modules have been fully characterized under static and dynamic conditions. These modules are targeted for high voltage, high frequency applications, as well as antiparallel diodes for 6.5kV IGBTs, IGCTs, and IEGTs." @default.
- W2117222588 created "2016-06-24" @default.
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- W2117222588 date "2012-09-01" @default.
- W2117222588 modified "2023-09-26" @default.
- W2117222588 title "Static and dynamic characterization of 6.5kV, 100A SiC Bipolar PiN Diode modules" @default.
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- W2117222588 doi "https://doi.org/10.1109/ecce.2012.6342485" @default.
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