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• W2117482878 abstract "In this paper, mobility parameters for n-channel 4H SiC MOSFETs are extracted and implemented into 2D device simulation program and SPICE circuit simulator. The experimental data were obtained from lateral n-channel 4H SiC MOSFET's with nitrided oxide-semiconductor interface, exhibiting normal mobility behavior. The effects of interface-trap density on the model parameters are discussed." @default.
• W2117482878 created "2016-06-24" @default.
• W2117482878 creator A5054062161 @default.
• W2117482878 creator A5078696696 @default.
• W2117482878 date "2003-06-25" @default.
• W2117482878 modified "2023-09-27" @default.
• W2117482878 title "Channel-carrier mobility parameters for 4H SiC MOSFETs" @default.
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• W2117482878 doi "https://doi.org/10.1109/miel.2002.1003290" @default.
• W2117482878 hasPublicationYear "2003" @default.
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