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• W2117580507 abstract "We have investigated the sputtering mechanism of films with regard to the fabrication of ferroelectric capacitors. The target surface was a stably metallic state, even when the reactive sputtering of was done in the reactive-gas system. The sputtered film phase, Ir or was determined by the dc power, essentially, the Ir-flux from the target into the plasma to react with oxygen radicals. The metallic Ir phase was deposited at high dc power with a large Ir-flux, while the oxide phase was obtained through a low Ir flux due to reacting well with oxygen radicals. This sputtering feature enabled us to obtain an -stacked top-electrode with a sharp interface by simply changing the sputtering power. This power-swing sputtering method is an effective way to form the stacked film when fabricating the top electrode of a (PZT) capacitor. We found that sputtering of the stacked top-electrode at a high oxygen pressure and low temperature suppressed damage to the PZT surface, achieving high-performance ferroelectric random access memory capacitors. © 2004 The Electrochemical Society. All rights reserved." @default.
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• W2117580507 date "2004-01-01" @default.
• W2117580507 modified "2023-09-27" @default.
• W2117580507 title "Smart Fabrication Process of an Ir-IrO[sub x] Top-Electrode on a PZT Film for Reliable FeRAM" @default.
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• W2117580507 doi "https://doi.org/10.1149/1.1640634" @default.
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