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Matches in SemOpenAlex for { <https://semopenalex.org/work/W2117613816> ?p ?o ?g. }

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• W2117613816 abstract "A new technique for a separate extraction of the current-path-dependent resistance (R <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>SD0</sub> ) from the contact-dependent source and drain resistances (R <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>Se</sub> and R <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>De</sub> ) is reported for a single MOSFET. We also report a technique for a separation of V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>GS</sub> -dependent source and drain resistance (R <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>SDi</sub> ) from the V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>GS</sub> - and L <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>eff</sub> -dependent channel resistance (R <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>ch</sub> ) with multiple MOSFETs. We confirm the proposed techniques applied to n-channel MOSFETs with various W/L combinations and obtain R <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>Se</sub> = 10.5 - 12.4 Ω , R <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>De</sub> ≅ 12.7 Ω, and R <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>SD0</sub> = 4.7 Ω for W = 10 μm. V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>GS</sub> -dependent but L-independent R <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>SDi</sub> is extracted to be 2.8 - 4.2 Ω." @default.
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• W2117613816 date "2011-06-01" @default.
• W2117613816 modified "2023-10-02" @default.
• W2117613816 title "Modeling and Separate Extraction of Gate-Bias- and Channel-Length-Dependent Intrinsic and Extrinsic Source–Drain Resistances in MOSFETs" @default.
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• W2117613816 doi "https://doi.org/10.1109/led.2011.2131116" @default.
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