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- W2117685233 abstract "We report on the demonstration of enhancement-mode n-channel GaN high-voltage metal-oxide field-effect transistor (MOSFET) realized on both p and n-GaN epilayer on sapphire substrates. These MOSFETs, with different gate geometries, shows good DC characteristics with world-best field-effect mobility of 167 cm2/V-s and maximum blocking voltage of 940 V." @default.
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- W2117685233 date "2006-08-08" @default.
- W2117685233 modified "2023-09-24" @default.
- W2117685233 title "Enhancement-Mode n-Channel GaN MOSFETs on p and n-GaN/Sapphire Substrates" @default.
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- W2117685233 doi "https://doi.org/10.1109/ispsd.2006.1666133" @default.
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