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• W2117739908 abstract "In this paper, atomic force microscopy-based techniques have been used to study, at nanoscale, the dependence of the electrical properties of <formula formulatype=inline xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex Notation=TeX>$hbox{Al}_{2}hbox{O}_{3}$</tex> </formula> stacks for flash memories on the annealing temperature ( <formula formulatype=inline xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex Notation=TeX>$T_{A}$</tex> </formula> ). The electrical characterization has been combined with other techniques (for example, transmission electron microscopy) that have allowed to investigate the dependence of the stack crystallization and the Si diffusion from the substrate to the gate oxide on <formula formulatype=inline xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex Notation=TeX>$T_{A}$</tex></formula> . The combination of both the analyses has allowed to explore if there is a relation between the percentage of diffused silicon and material crystallization with the conductivity and charge trapping of <formula formulatype=inline xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex Notation=TeX> $hbox{Al}_{2}hbox{O}_{3}$</tex></formula> stacks." @default.
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• W2117739908 date "2011-03-01" @default.
• W2117739908 modified "2023-09-26" @default.
• W2117739908 title "Conductivity and Charge Trapping After Electrical Stress in Amorphous and Polycrystalline $hbox{Al}_{2}hbox{O}_{3}hbox{-Based}$ Devices Studied With AFM-Related Techniques" @default.
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• W2117739908 doi "https://doi.org/10.1109/tnano.2010.2041935" @default.
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