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• W2117798870 abstract "Metal-assisted chemical etching is a relatively new top-down approach allowing a highly controlled and precise fabrication of Si and Si/Ge superlattice nanowires. It is a simple method with the ability to tailor diverse nanowire parameters like diameter, length, density, orientation, doping level, doping type, and morphology. In a typical metal-assisted chemical etching procedure, a Si substrate is covered by a lithographic noble metal film and etched in a solution containing HF and an oxidant (typically H2O2). In general, the function of the metal is to catalyze the reduction of H2O2, which delivers electronic holes necessary for the oxidation and subsequent dissolution of the Si oxide by HF. However, the details of the etching process using contiguous metal thin films, especially the mass transport of reactants and byproducts are still not well understood. In this study, the etching mechanism was systematically investigated. Several models of metal-assisted chemical etching using a contiguous metal film..." @default.
• W2117798870 created "2016-06-24" @default.
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• W2117798870 date "2012-06-12" @default.
• W2117798870 modified "2023-09-30" @default.
• W2117798870 title "Model for the Mass Transport during Metal-Assisted Chemical Etching with Contiguous Metal Films As Catalysts" @default.
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• W2117798870 doi "https://doi.org/10.1021/jp3034227" @default.
• W2117798870 hasPublicationYear "2012" @default.
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