Matches in SemOpenAlex for { <https://semopenalex.org/work/W2118045353> ?p ?o ?g. }
Showing items 1 to 85 of
85
with 100 items per page.
- W2118045353 abstract "Inductively coupled plasma (ICP) etching has been replacing conventional reactive ion etching (RIE) for GaAs backside via etching to provide low inductance grounding in microwave devices like HEMT and MESFET. ICP tools provide higher throughput with faster etch rates in addition to better dimensional control, repeatability and reproducibility. Generally reported etch depths using ICP for via-hole etching applications in GaAs Monolithic Microwave Integrated Circuits are < 200mum using photoresist mask due to lower etch rate and poor mask selectivity. In this study, we are reporting the ICP etching of 60mum diameter via-holes for etch depth ~ 200mum, on 3-inch GaAs wafer with photoresist mask using C12/BC13 gases. ICP process parameters like pressure and platen power were varied at a fixed ICP coil power to achieve an etch depth ~ 200mum at a relatively very high etch rate with good etch surface morphology. The etch rate, etch depth, etch profile and surface morphology of etched holes were determined using scanning electron microscope. The average etch rate decreased rapidly with time, from 7mum/min for 10 minute of etching to 3.9mum/min for 45 minutes of etching on 3-inch GaAs wafer, mainly due to increased depth. Whereas etch rate increased with the increase in process pressure due to increased density of reactive species but anisotropy is maintained, as independent ion energy control is provided by RF biasing of the wafer platen in ICP systems. High etch rates ~ 4.4mum/min are obtained at 40mTorr pressure for an etch time of 45 minutes. Increasing platen power from 65W to 90W at pressure 30mTorr has resulted in reduction of etch rate from 3.9 mum/min to 3.6 mumm/min, probably due to increased physical etching component at 90W. The best mask selectivity obtained was >12:1." @default.
- W2118045353 created "2016-06-24" @default.
- W2118045353 creator A5026313279 @default.
- W2118045353 creator A5039726791 @default.
- W2118045353 creator A5063785826 @default.
- W2118045353 creator A5090559562 @default.
- W2118045353 date "2009-06-01" @default.
- W2118045353 modified "2023-10-16" @default.
- W2118045353 title "Study of Cl2/BCl3 inductively coupled plasma for selective etching of GaAs" @default.
- W2118045353 cites W2045171116 @default.
- W2118045353 doi "https://doi.org/10.1109/plasma.2009.5227430" @default.
- W2118045353 hasPublicationYear "2009" @default.
- W2118045353 type Work @default.
- W2118045353 sameAs 2118045353 @default.
- W2118045353 citedByCount "2" @default.
- W2118045353 countsByYear W21180453532012 @default.
- W2118045353 countsByYear W21180453532023 @default.
- W2118045353 crossrefType "proceedings-article" @default.
- W2118045353 hasAuthorship W2118045353A5026313279 @default.
- W2118045353 hasAuthorship W2118045353A5039726791 @default.
- W2118045353 hasAuthorship W2118045353A5063785826 @default.
- W2118045353 hasAuthorship W2118045353A5090559562 @default.
- W2118045353 hasConcept C100460472 @default.
- W2118045353 hasConcept C107187091 @default.
- W2118045353 hasConcept C113196181 @default.
- W2118045353 hasConcept C121332964 @default.
- W2118045353 hasConcept C1291036 @default.
- W2118045353 hasConcept C130472188 @default.
- W2118045353 hasConcept C134406635 @default.
- W2118045353 hasConcept C159985019 @default.
- W2118045353 hasConcept C160671074 @default.
- W2118045353 hasConcept C171250308 @default.
- W2118045353 hasConcept C185592680 @default.
- W2118045353 hasConcept C191897082 @default.
- W2118045353 hasConcept C192562407 @default.
- W2118045353 hasConcept C26771246 @default.
- W2118045353 hasConcept C2777859621 @default.
- W2118045353 hasConcept C2779227376 @default.
- W2118045353 hasConcept C43617362 @default.
- W2118045353 hasConcept C44838205 @default.
- W2118045353 hasConcept C49040817 @default.
- W2118045353 hasConcept C62520636 @default.
- W2118045353 hasConcept C81626474 @default.
- W2118045353 hasConcept C82706917 @default.
- W2118045353 hasConcept C95974651 @default.
- W2118045353 hasConceptScore W2118045353C100460472 @default.
- W2118045353 hasConceptScore W2118045353C107187091 @default.
- W2118045353 hasConceptScore W2118045353C113196181 @default.
- W2118045353 hasConceptScore W2118045353C121332964 @default.
- W2118045353 hasConceptScore W2118045353C1291036 @default.
- W2118045353 hasConceptScore W2118045353C130472188 @default.
- W2118045353 hasConceptScore W2118045353C134406635 @default.
- W2118045353 hasConceptScore W2118045353C159985019 @default.
- W2118045353 hasConceptScore W2118045353C160671074 @default.
- W2118045353 hasConceptScore W2118045353C171250308 @default.
- W2118045353 hasConceptScore W2118045353C185592680 @default.
- W2118045353 hasConceptScore W2118045353C191897082 @default.
- W2118045353 hasConceptScore W2118045353C192562407 @default.
- W2118045353 hasConceptScore W2118045353C26771246 @default.
- W2118045353 hasConceptScore W2118045353C2777859621 @default.
- W2118045353 hasConceptScore W2118045353C2779227376 @default.
- W2118045353 hasConceptScore W2118045353C43617362 @default.
- W2118045353 hasConceptScore W2118045353C44838205 @default.
- W2118045353 hasConceptScore W2118045353C49040817 @default.
- W2118045353 hasConceptScore W2118045353C62520636 @default.
- W2118045353 hasConceptScore W2118045353C81626474 @default.
- W2118045353 hasConceptScore W2118045353C82706917 @default.
- W2118045353 hasConceptScore W2118045353C95974651 @default.
- W2118045353 hasLocation W21180453531 @default.
- W2118045353 hasOpenAccess W2118045353 @default.
- W2118045353 hasPrimaryLocation W21180453531 @default.
- W2118045353 hasRelatedWork W1985040212 @default.
- W2118045353 hasRelatedWork W1992219747 @default.
- W2118045353 hasRelatedWork W2010923447 @default.
- W2118045353 hasRelatedWork W2031434171 @default.
- W2118045353 hasRelatedWork W2047817324 @default.
- W2118045353 hasRelatedWork W2058073626 @default.
- W2118045353 hasRelatedWork W2065108417 @default.
- W2118045353 hasRelatedWork W2118045353 @default.
- W2118045353 hasRelatedWork W2141646359 @default.
- W2118045353 hasRelatedWork W2392383132 @default.
- W2118045353 isParatext "false" @default.
- W2118045353 isRetracted "false" @default.
- W2118045353 magId "2118045353" @default.
- W2118045353 workType "article" @default.