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- W2118049181 abstract "A silicon direct bonding SDB process was developed using a special chamber for cleaning, contacting and prebonding wafers up to 100 mm. After prebonding the wafers at 200°C, annealing was carried out at temperatures ranging from 600°C to 1180°C for times between 30 minutes and 20 hours. Bare silicon and oxidized I–V wafers were bonded. The electrical specification was done by evaluating the characteristics with respect to breakdown, reverse current, ideality factor, series and parallel resistance (R s, R p). A strong dependence of R s and R p on bonding temperature and time was observed. In order to prove the viability of the bonded substrate for power devices, we fabricated p–i–n diodes. The diodes exhibit 2 breakdown voltages up to 1400 V and forward current densities of 2 A mm−2. These p–i–n diodes were superior to diodes fabricated simultaneously on epitaxial material." @default.
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- W2118049181 date "1996-12-01" @default.
- W2118049181 modified "2023-09-27" @default.
- W2118049181 title "Silicon direct bonding SDB a substrate material for electronic devices" @default.
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- W2118049181 doi "https://doi.org/10.1080/002072196136319" @default.
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