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• W2118049775 abstract "We have investigated the properties of indium nitride (InN) grown at various temperatures on c-plane sapphire substrates using remote plasma enhanced chemical vapour deposition (RPECVD). The optical absorption spectra show a broad range of the apparent band-gap from 0.90 to 2.18 eV, depending on the growth temperature. These two extreme apparent band-gaps are similar to the controversial values of 0.7 and 1.9 eV quoted in the InN band-gap debate. Along with optical absorption results, the influence of growth temperature on growth rate, and carrier concentration is discussed. The correlations between the carrier concentration, and shallow-donors (oxygen and hydrogen) in InN are also analysed" @default.
• W2118049775 created "2016-06-24" @default.
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• W2118049775 date "2006-01-25" @default.
• W2118049775 modified "2023-10-10" @default.
• W2118049775 title "Properties of InN Grown by Remote Plasma Enhanced Chemical Vapour Deposition" @default.
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• W2118049775 doi "https://doi.org/10.1109/commad.2004.1577498" @default.
• W2118049775 hasPublicationYear "2006" @default.
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