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• W2118055367 abstract "We made high-quality n/sup +/-doped polycrystalline silicon (poly-Si) thin-films on glass for a prospective use as seed layers for subsequent epitaxial growth of poly-Si thin-film solar cells. The seed layers are less than 200 nm thick, have a grain size of up to 2 /spl mu/m, and were made from PECVD-deposited phosphorus-doped a-Si precursor layers that were thermally crystallised (solid-phase crystallisation, SPC) at about 600/spl deg/C using various temperature-time profiles. In this paper we present the structural properties of these SPC poly-Si films on glass, as determined by transmission electron microscopy and focussed ion beam investigations." @default.
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• W2118055367 date "2003-05-18" @default.
• W2118055367 modified "2023-09-23" @default.
• W2118055367 title "Structural properties of polycrystalline silicon seed layers made on glass by solid-phase crystallisation" @default.
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