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• W2118897995 abstract "High-power operation of AlGaN/GaN high-electron-mobility transistors (HEMTs) requires efficient heat removal through the substrate. GaN composite substrates including high-thermal-conductivity diamond are promising, but high thermal resistances at the interfaces between the GaN and diamond can offset the benefit of a diamond substrate. We report on measurements of the thermal resistances at the GaN-diamond interfaces for two generations (1 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>st</sup> and 2 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>nd</sup> ) of GaN-on-diamond substrates using a combination of picosecond time-domain thermoreflectance (TDTR) and nanosecond transient thermoreflectance (TTR) techniques. Two flipped-epitaxial samples are presented to determine the thermal resistances of the AlGaN/AlN transition layer. For the 2 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>nd</sup> generation samples, electrical heating and thermometry in nanopatterned metal bridges confirms the TDTR results. This paper demonstrates that the latter generation samples, which reduce the AlGaN thickness by 75%, result in a strongly-reduced thermal resistance between the GaN and diamond. Further optimization of the GaN-diamond interfaces should provide an opportunity for improved cooling of HEMT devices." @default.
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• W2118897995 date "2012-05-01" @default.
• W2118897995 modified "2023-10-16" @default.
• W2118897995 title "Thermal characterization of GaN-on-diamond substrates for HEMT applications" @default.
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• W2118897995 doi "https://doi.org/10.1109/itherm.2012.6231463" @default.
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