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• W2119840819 abstract "A new scalable noise and small-signal model for deep-submicrometer metal-oxide semiconductor field-effect transistors, which consist of multiple elementary cells is presented in this paper. It allows exact modeling of all noise and small-signal model parameters from elementary cell to large-size device. The scalable rules for noise and small-signal model parameters are given in detail. The experimental and theoretical results show that at same bias condition, good scaling of the noise, and small-signal model parameters can be achieved between the large-size devices and elementary cell. Model verification is carried out by comparison of measured and simulated S-parameters and noise parameters. Good agreement is obtained between the measured and modeled results for 4 times 0.6 times 18 mum, 8 times 0.6 times 12 mum, and 32 times 0.6 times 2 mum gatewidth (number of gate fingers times unit gatewidth times cells) 90 nm gatelength MOSFETs." @default.
• W2119840819 created "2016-06-24" @default.
• W2119840819 creator A5067852587 @default.
• W2119840819 creator A5087624104 @default.
• W2119840819 date "2009-04-01" @default.
• W2119840819 modified "2023-09-29" @default.
• W2119840819 title "Scalable Small-Signal and Noise Modeling for Deep-Submicrometer MOSFETs" @default.
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• W2119840819 doi "https://doi.org/10.1109/tmtt.2009.2015075" @default.
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