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W2119894448 abstract "We have fabricated a functional FinFET ring oscillator with a physical gate length of 25 nm and a fin width of 10 nm, the smallest ever reported. We demonstrate that these narrow (W/sub fin/ = 10 nm) and tall (H/sub fin/ = 60 - 80 nm) fins can be reliably etched with controlled profiles and that they are required to keep the short-channel effects under control, resulting in drain-induced barrier leakage characteristics of 45 mV/V at V DD = 1 V and L/sub g/ = 25 nm for the nFET. For these ultrathin (10 nm) fins, we have succeeded in properly setting the V T at 0.2 V without the use of metal gates. In addition to ring oscillators, we also have obtained excellent pFET FinFET devices at wider fin widths (W/sub fin/ = 65 nm) with I/sub dsat/ = 380 μA/μm at I/sub off/ = 60 nA/μm and V DD = -1.2 V." @default.
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W2119894448 date "2004-08-01" @default.
W2119894448 modified "2023-10-14" @default.
W2119894448 title "A Functional 41-Stage Ring Oscillator Using Scaled FinFET Devices With 25-nm Gate Lengths and 10-nm Fin Widths Applicable for the 45-nm CMOS Node" @default.
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W2119894448 doi "https://doi.org/10.1109/led.2004.831585" @default.
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