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- W2120053963 abstract "Performance of Multicrystalline ingots is affected by many properties, especially during the crystallizing process. Reducing the defects of ingots and improving the cell property are main stream pursuits for this field. For this study, three types of thermal gradient during crystallizing were tested to verify the properties of Multi-crystalline ingot. Reducing the thermal gradient can slow the growth rate with the ingot oxygen concentration and cell efficiency being the main impact on ingot performance. Current acceptable oxygen concentrations are below 10×10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>17</sup> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-3</sup> , however the oxygen concentration at bottom of the ingot can be reduced to 2×10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>17</sup> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-3</sup> with a slow down in the growth rate. In addition, wafer efficiency can also increase 0.2% by setting up a small thermal gradient. Regarding cell properties, a small thermal gradient during solidification increased the performance of J <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>sc</sub> and V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>oc</sub> ." @default.
- W2120053963 created "2016-06-24" @default.
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- W2120053963 date "2011-06-01" @default.
- W2120053963 modified "2023-09-27" @default.
- W2120053963 title "Thermal gradient influence of HEM multi-crystalline Si ingot" @default.
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- W2120053963 doi "https://doi.org/10.1109/pvsc.2011.6186378" @default.
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