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- W2120100311 abstract "Undoped Nanostructured Titanium Dioxide thin film (UN) and Cobalt doped nanostructured (CoDN) TiO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> thin film has successfully prepared using sol-gel method and deposited onto silicon and glass substrate by spin coating technique. Nanostructured TiO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> thin film were prepared at 0.1M, 0.2M, 0.3M and 0.4M, Co doped TiO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> thin film was prepared with additional of ion Co at 1at%. The electrical and optical properties of the UN TiO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> thin films and CoDN TiO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> thin film has successfully studied. The electrical properties indicates that both 0.2M of UN TiO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> thin film and CoDN TiO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> thin film gives low of resistance compare to other sol-gel concentration. As we compared both UN TiO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> thin film and CoDN TiO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> thin film, the lowest resistance comes from Cobalt doped TiO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> thin film. For optical properties, CoDN TiO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> thin film gives the highest percentage of transmittance, which is above 80% in visible region (450-1000nm). As for band gap energy, there is decreasing in band gap energy compared from UN TiO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> thin film to CoDN TiO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> thin film." @default.
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- W2120100311 date "2008-11-01" @default.
- W2120100311 modified "2023-09-26" @default.
- W2120100311 title "Study of cobalt doping on the electrical and optical properties of titanium dioxide thin film prepared by sol-gel method" @default.
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- W2120100311 doi "https://doi.org/10.1109/smelec.2008.4770388" @default.
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