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- W2120147230 abstract "Abstract : The overall technical objective of this program is to advance the state-of-the-art of InAsP/InGaAs materials development so that 2.1 micrometers APDs which presently do not exist and offer ten times the light detection sensitivity of anything now available can be made." @default.
- W2120147230 created "2016-06-24" @default.
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- W2120147230 date "1995-02-01" @default.
- W2120147230 modified "2023-09-27" @default.
- W2120147230 title "InAsP/InGaAs Materials Development for 2.1 Micron Avalanche Photodiodes. Phase 2." @default.
- W2120147230 hasPublicationYear "1995" @default.
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