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- W2120147605 abstract "Cu 2 SnS 3 is a narrow-band-gap semiconductor material. It has suitable optical and electrical properties which make it a potential absorber layer of solar cells. In this paper, Cu 2 SnS 3 thin films were successfully obtained by sulfurizing CuSnS 2 thin films deposited by RF magnetron sputtering at temperatures of 350–425°C for 2 h in an atmosphere of hydrogen sulfide and nitrogen. The influence of the sulfurization temperature on the electrical and optical properties of the Cu 2 SnS 3 thin films was investigated. The experimental results show that the Cu 2 SnS 3 thin films sulfurized at a temperature of 425°C exhibit better properties than others. The mobility and resistivity of the Cu 2 SnS 3 films are 9 cm 2 /V·s and 3 Ω·cm, respectively. And its optical band gap is estimated to be about 1.77 eV." @default.
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- W2120147605 date "2013-01-01" @default.
- W2120147605 modified "2023-10-16" @default.
- W2120147605 title "Influence of Sulfurization Temperature on Photoelectric Properties Cu<sub>2</sub>SnS<sub>3</sub>Thin Films Deposited by Magnetron Sputtering" @default.
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- W2120147605 doi "https://doi.org/10.1155/2013/726080" @default.
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