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• W2120203757 abstract "Quantum well infrared photodetector (QWIP) structures were grown by metal organic vapour phase epitaxy (MOVPE) and molecular beam epitaxy (MBE). These n-type QWIP structures were fabricated into devices. Inter-subband and inter-band transition energies were measured using photoresponse and photoluminescence spectroscopy. The carrier dynamics of one of the structures was analysed using temperature dependent up-conversion spectroscopy. These results were modelled with the solution of a three level system. Measurement of an n-type QWIP allows us to determine the inter-subband relaxation time of a p-type QWIP. The intersubband relaxation time of a p-type QWIP with 3 nm wide wells was determined to be 15 ps." @default.
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• W2120203757 date "2002-11-28" @default.
• W2120203757 modified "2023-09-27" @default.
• W2120203757 title "A comparative study of GaAs/AlGaAs quantum well infrared photodetectors grown by molecular beam epitaxy and metal organic vapour phase epitaxy" @default.
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• W2120203757 doi "https://doi.org/10.1109/commad.1998.791659" @default.
• W2120203757 hasPublicationYear "2002" @default.
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