FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W2120773030> ?p ?o ?g. }

• W2120773030 abstract "The finite barrier height at AlGaN/GaN heterointerface causes the nonvanishing probability of penetration of electrons into it. Therefor e a nonzero carriers' concentration appears also in spacer layer of AlGaN/GaN MODFET. The existence of that charge has not been yet quantitatively considered, but the its influence is observed on high gate polarisation in AlGaAs/GaAs heterostructure (1, 2, 3). Theoretical investigation of surface concentration in this layer nt for various gate voltages has shown the increasing character if gate voltage is increased. The comparison between surface concentration in spacer layer and in the channel suggests that the former one can't be considered negligible, especially for higher values of gate voltages, when it becomes comparable with the latter. The possible consequences of this effect on devices' operation undoubtly deserve to be examined (at least as the influence of parasitic capacitances if the considerably degraded mobility of these electrons compared to the mobility of channel carriers is beforehand accepted). II NTRODUCTION It is well known that two materials with different energy gaps (the smaller energy gap entirley lies within the bigger one) form heterojunction which is widely exploited in current device physics and microelectronics. At this heterojunction the conducting channel arises, mostly situated in the region of smaller energy gap semiconductor. That means that the electrons (being main carriers) are confined in the vicinity of heterointerface. Surface concentration of these carriers is examined in details, both theoretically and experimentally (4, 5). But the finite depth of potential well which confines carriers implies the nonzero probability of their penetration into another side of the heterointerface. This fact has usually been ignored and the influence of these carriers on device's operation inadequately examined. In this paper the simple model for determination of surface concentration of carriers in buffer layer has been developed and applied in the case of well known (N + )AlGaN/(p - )GaN HEMT. II BASIC OF THE MODEL The band structure of AlGaN/GaN is presented in Fig.1. When thermodynamical equilibrium arises the electrons become confined. The role of undoped layer in AlGaN is to separate ionized donors in it from electrons in 2DEG in order to prevent their mobility degradation." @default.
• W2120773030 created "2016-06-24" @default.
• W2120773030 creator A5049129209 @default.
• W2120773030 creator A5057079178 @default.
• W2120773030 creator A5079610818 @default.
• W2120773030 date "2002-01-01" @default.
• W2120773030 modified "2023-09-27" @default.
• W2120773030 title "Sheet Density of Electrons in Spacer Layer of AlGaN/GaN MODFET: Calculating and Analysing D.˝ evizovi¸ , R. Šašiand R. Ramovi¸" @default.
• W2120773030 cites W2025983961 @default.
• W2120773030 cites W2059600584 @default.
• W2120773030 cites W2152028938 @default.
• W2120773030 cites W580341738 @default.
• W2120773030 hasPublicationYear "2002" @default.
• W2120773030 type Work @default.
• W2120773030 sameAs 2120773030 @default.
• W2120773030 citedByCount "0" @default.
• W2120773030 crossrefType "journal-article" @default.
• W2120773030 hasAuthorship W2120773030A5049129209 @default.
• W2120773030 hasAuthorship W2120773030A5057079178 @default.
• W2120773030 hasAuthorship W2120773030A5079610818 @default.
• W2120773030 hasConcept C104232198 @default.
• W2120773030 hasConcept C106782819 @default.
• W2120773030 hasConcept C108225325 @default.
• W2120773030 hasConcept C121332964 @default.
• W2120773030 hasConcept C147120987 @default.
• W2120773030 hasConcept C162057924 @default.
• W2120773030 hasConcept C165801399 @default.
• W2120773030 hasConcept C171250308 @default.
• W2120773030 hasConcept C172385210 @default.
• W2120773030 hasConcept C181966813 @default.
• W2120773030 hasConcept C187937830 @default.
• W2120773030 hasConcept C192562407 @default.
• W2120773030 hasConcept C26873012 @default.
• W2120773030 hasConcept C2779227376 @default.
• W2120773030 hasConcept C2779833192 @default.
• W2120773030 hasConcept C29169072 @default.
• W2120773030 hasConcept C49040817 @default.
• W2120773030 hasConcept C520434653 @default.
• W2120773030 hasConcept C62520636 @default.
• W2120773030 hasConcept C79794668 @default.
• W2120773030 hasConceptScore W2120773030C104232198 @default.
• W2120773030 hasConceptScore W2120773030C106782819 @default.
• W2120773030 hasConceptScore W2120773030C108225325 @default.
• W2120773030 hasConceptScore W2120773030C121332964 @default.
• W2120773030 hasConceptScore W2120773030C147120987 @default.
• W2120773030 hasConceptScore W2120773030C162057924 @default.
• W2120773030 hasConceptScore W2120773030C165801399 @default.
• W2120773030 hasConceptScore W2120773030C171250308 @default.
• W2120773030 hasConceptScore W2120773030C172385210 @default.
• W2120773030 hasConceptScore W2120773030C181966813 @default.
• W2120773030 hasConceptScore W2120773030C187937830 @default.
• W2120773030 hasConceptScore W2120773030C192562407 @default.
• W2120773030 hasConceptScore W2120773030C26873012 @default.
• W2120773030 hasConceptScore W2120773030C2779227376 @default.
• W2120773030 hasConceptScore W2120773030C2779833192 @default.
• W2120773030 hasConceptScore W2120773030C29169072 @default.
• W2120773030 hasConceptScore W2120773030C49040817 @default.
• W2120773030 hasConceptScore W2120773030C520434653 @default.
• W2120773030 hasConceptScore W2120773030C62520636 @default.
• W2120773030 hasConceptScore W2120773030C79794668 @default.
• W2120773030 hasLocation W21207730301 @default.
• W2120773030 hasOpenAccess W2120773030 @default.
• W2120773030 hasPrimaryLocation W21207730301 @default.
• W2120773030 hasRelatedWork W1971651647 @default.
• W2120773030 hasRelatedWork W1987695381 @default.
• W2120773030 hasRelatedWork W1988105662 @default.
• W2120773030 hasRelatedWork W1998516947 @default.
• W2120773030 hasRelatedWork W2006981183 @default.
• W2120773030 hasRelatedWork W2051200725 @default.
• W2120773030 hasRelatedWork W2057039959 @default.
• W2120773030 hasRelatedWork W2072505639 @default.
• W2120773030 hasRelatedWork W2088240249 @default.
• W2120773030 hasRelatedWork W2092108755 @default.
• W2120773030 hasRelatedWork W2094310184 @default.
• W2120773030 hasRelatedWork W2095749703 @default.
• W2120773030 hasRelatedWork W2115624325 @default.
• W2120773030 hasRelatedWork W2143356896 @default.
• W2120773030 hasRelatedWork W2896921258 @default.
• W2120773030 hasRelatedWork W2954709552 @default.
• W2120773030 hasRelatedWork W3203086017 @default.
• W2120773030 hasRelatedWork W349260013 @default.
• W2120773030 hasRelatedWork W2181588018 @default.
• W2120773030 hasRelatedWork W2269898393 @default.
• W2120773030 isParatext "false" @default.
• W2120773030 isRetracted "false" @default.
• W2120773030 magId "2120773030" @default.
• W2120773030 workType "article" @default.