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• W2120793316 abstract "Abstract Plasma-assisted thermal chemical vapor deposition (CVD) was carried out to synthesize high-quality graphene film at a low temperature of 600°C. Monolayer graphene films were thus synthesized on Cu foil using various ratios of hydrogen and methane in a gaseous mixture. The in situ plasma emission spectrum was measured to elucidate the mechanism of graphene growth in a plasma-assisted thermal CVD system. According to this process, a distance must be maintained between the plasma initial stage and the deposition stage to allow the plasma to diffuse to the substrate. Raman spectra revealed that a higher hydrogen concentration promoted the synthesis of a high-quality graphene film. The results demonstrate that plasma-assisted thermal CVD is a low-cost and effective way to synthesis high-quality graphene films at low temperature for graphene-based applications." @default.
• W2120793316 created "2016-06-24" @default.
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• W2120793316 date "2013-06-12" @default.
• W2120793316 modified "2023-10-06" @default.
• W2120793316 title "Low-temperature synthesis of graphene on Cu using plasma-assisted thermal chemical vapor deposition" @default.
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• W2120793316 doi "https://doi.org/10.1186/1556-276x-8-285" @default.
• W2120793316 hasPubMedCentralId "https://www.ncbi.nlm.nih.gov/pmc/articles/3682863" @default.
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• W2120793316 hasPublicationYear "2013" @default.
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