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• W2120974225 abstract "A novel SOI MOSFET structure to suppress the floating-body effect (FBE) and the short-channel effects is proposed and successfully demonstrated. In the new structure, a tunnel diode body contact is embedded in the source region, which can effectively release the accumulated body carriers. In an nMOSFET, a heavily doped p <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>+</sup> layer is introduced beneath the n <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>+</sup> source region so that the body and the source are effectively connected through tunneling. The fabricated device shows the suppressed FBE and lower DIBL. The new structure does not enlarge the device size and is fully compatible with SOI CMOS technology." @default.
• W2120974225 created "2016-06-24" @default.
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• W2120974225 date "2011-10-01" @default.
• W2120974225 modified "2023-10-14" @default.
• W2120974225 title "A Tunnel Diode Body Contact Structure to Suppress the Floating-Body Effect in Partially Depleted SOI MOSFETs" @default.
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• W2120974225 doi "https://doi.org/10.1109/led.2011.2162813" @default.
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