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- W2121364279 abstract "The texture evolution of hafnium diboride (HfB2) thin films grown by chemical vapor deposition from the single source precursor Hf(BH4)4 was studied. Films grown on amorphous substrates show a (0 0 0 1) orientation at growth temperatures ⩽700 °C, but a (1 0 1̲ 0) orientation at 800 °C and above. Single-crystal substrates greatly influence the preferred orientation and in-plane texture of the films: (1 0 1̲ 0) orientation is favored on Si (0 0 1), whereas there is a strong tendency to grow in a (0 0 0 1) orientation on Si (1 1 1). At a growth temperature of 950 °C, HfB2 can be epitaxially grown on Si (1 1 1) substrates." @default.
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- W2121364279 date "2006-09-01" @default.
- W2121364279 modified "2023-10-01" @default.
- W2121364279 title "Crystalline texture in hafnium diboride thin films grown by chemical vapor deposition" @default.
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- W2121364279 doi "https://doi.org/10.1016/j.jcrysgro.2006.05.035" @default.
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