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• W2121502809 abstract "A new Schottky barrier (SB) nonvolatile nanowire memory is reported experimentally with efficient low-voltage programming and erasing. By applying an SB source/drain to enhance the electrical field in the silicon gate-all-around nanowire, the nonvolatile silicon-oxide-nitride-oxide-silicon (SONOS) memory can operate at gate voltages of 5 to 7 V for programming and -7 to -9 V for erasing through Fowler-Nordheim tunneling. The larger the gate voltage is, the faster the programming/erasing speed and the wider the threshold-voltage shift are attained. Importantly, the SB nanowire SONOS cells exhibit superior 100-K cycling endurance and high-temperature retention without any damages from metallic silicidation process or field-enhanced tunneling." @default.
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• W2121502809 date "2011-11-01" @default.
• W2121502809 modified "2023-09-25" @default.
• W2121502809 title "Schottky Barrier Silicon Nanowire SONOS Memory With Ultralow Programming and Erasing Voltages" @default.
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• W2121502809 doi "https://doi.org/10.1109/led.2011.2164510" @default.
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