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- W2121570481 abstract "This paper describes some of the performance characteristics of self-aligned polysilicon Schottky Source-Gated Transistors (SGTs) made on glass by laser annealing of amorphous silicon. The threshold and Schottky barrier height are tuned by varying the dose of dopants in the bulk and under the source respectively. These devices are well suited for analog applications owing to their low saturation voltage, low drain field dependence of the current and intrinsic gain which is in excess of 1000 for well designed structures. Double drain operation leads to ƒ T ≈100MHz for non-optimized devices." @default.
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- W2121570481 date "2010-07-18" @default.
- W2121570481 modified "2023-09-26" @default.
- W2121570481 title "Properties of Source-Gated Transistors in polysilicon" @default.
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