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- W2121636892 abstract "The dynamic fluctuation of stress-induced leakage current, called V-SILC, which is one of the causes of erratic bits in flash memory, was investigated. The effect of V-SILC on flash memory retention increases with the scaling down of device dimensions because the amplitude of V-SILC is constant and does not depend on the gate area. A statistical analysis of V-SILC indicated that V-SILC is random telegraph noise (RTN) of gate SILC and is associated with the state transition of a single defect in a gate oxide. The state transition of the defect is caused by an electron collision with the defect." @default.
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- W2121636892 date "2008-04-01" @default.
- W2121636892 modified "2023-09-24" @default.
- W2121636892 title "A new insight into the dynamic fluctuation mechanism of stress-induced leakage current" @default.
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- W2121636892 doi "https://doi.org/10.1109/relphy.2008.4558953" @default.
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