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• W2121676629 abstract "InGaAs-GaAs-AlGaAs strained-layer distributed-feedback (DFB) ridge-waveguide lasers requiring a single metalorganic chemical vapor deposition (MOCVD) growth step are shown to operate in a single longitudinal mode up to 2.2*I/sub th/ with an antireflection (AR) coating applied to one facet under room temperature, pulsed conditions. A value of kL=0.33 has been determined from threshold gain calculations for coated and uncoated devices. Weak lateral optical confinement, provided by unpumped lateral gratings is demonstrated by the absence of antiguiding effects, and a real lateral index step of approximately 4*10/sup -3/ is determined from near-field emission patterns. >" @default.
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• W2121676629 date "1992-04-01" @default.
• W2121676629 modified "2023-09-28" @default.
• W2121676629 title "Characterization of an InGaAs-GaAs-AlGaAs strained-layer distributed-feedback ridge-waveguide quantum-well heterostructure laser" @default.
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• W2121676629 doi "https://doi.org/10.1109/68.127192" @default.
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