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• W2121834400 abstract "Ion-implanted In/sub (x)/Ga/sub (1-x)/ As MESFETs on GaAs substrate are very attractive devices for ultra-high-frequency and ultra-high-speed integrated circuit applications due to the simplicity of material structure and manufacturability of ion implantation technology. The advances in ion-implanted In/sub (x)/Ga/sub (1-x)/As/GaAs MESFET technology are reviewed, focusing on material structures, device fabrications, manufacturability, current gain cutoff frequency, and maximum power oscillation frequency performance, as well as low noise, power, and oscillator performance in the millimeter-wave frequency range.< <ETX xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>></ETX>" @default.
• W2121834400 created "2016-06-24" @default.
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• W2121834400 date "1992-03-01" @default.
• W2121834400 modified "2023-09-25" @default.
• W2121834400 title "Ion-implanted In/sub (x)/Ga/sub (1-x)/As MESFET's on GaAs substrate for low-cost millimeter-wave IC application" @default.
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• W2121834400 doi "https://doi.org/10.1109/16.123467" @default.
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