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- W2121902008 abstract "Poly crystalline Cu <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> O films produced by plasma oxidation are investigated for nonvolatile memory applications. Reversible bistable resistive switching from a high-resistance state to a low-resistance state, and vice versa, is observed in an integrated Al/Cu <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> O/Cu structure under voltage sweeping. More than 3000 repetitive cycles are observed in 180-mum memory devices with an on/off ratio of ten times. Data testing shows that the devices meet the ten-year retention requirement for the storage of programmed logic signals." @default.
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- W2121902008 date "2008-04-01" @default.
- W2121902008 modified "2023-09-23" @default.
- W2121902008 title "Resistive Memory Switching of $hbox{Cu}_{x}hbox{O}$ Films for a Nonvolatile Memory Application" @default.
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- W2121902008 doi "https://doi.org/10.1109/led.2008.917109" @default.
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