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• W2121962586 abstract "This paper describes the small-signal characterization through delay-time analysis and high-power operation of the Ka-band of AlGaN/GaN heterojunction field-effect transistors (FETs). An FET with a gatewidth of 100 /spl mu/m and a gate length of 0.09 /spl mu/m has exhibited a current gain cutoff frequency (f/sub T/) of 81 GHz, a maximum frequency of oscillation (fmax) of 187 GHz, and a maximum stable gain of 10.5 dB at 30 GHz (8.3 dB at 60 GHz). Delay-time analysis has demonstrated channel electron velocities of 1.50/spl times/10/sup 7/ to 1.75/spl times/10/sup 7/ cm/s in a gate-length range of 0.09-0.25 /spl mu/m. State-of-the-art performance-saturated power of 5.8 W with a linear gain of 9.2 dB and a power-added efficiency of 43.2%-has been achieved at 30 GHz using a single chip having a gatewidth of 1.0 mm and a gate length of 0.25 /spl mu/m." @default.
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• W2121962586 date "2005-01-01" @default.
• W2121962586 modified "2023-10-15" @default.
• W2121962586 title "30-GHz-band over 5-W power performance of short-channel AlGaN/GaN heterojunction FETs" @default.
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• W2121962586 doi "https://doi.org/10.1109/tmtt.2004.839333" @default.
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