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• W2122097942 abstract "This paper reports on a novel multidimensional CMOS based stress sensor. The sensor uses an individual n-well to detect all in-plane stress components through the application of the switching current method. To reduce the system's non-linearities the sensor features a middle contact for improved biasing conditions. A bending-bridge setup was used to apply stress to the device. The behavior was modelled using a novel combination of the finite element method and a nonlinear SPICE network simulation. The device supplies information about the angular dependence of the resistive components and the orthogonal offset voltage. These may be used to extract the three in-plane stress components." @default.
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• W2122097942 date "2004-07-08" @default.
• W2122097942 modified "2023-09-23" @default.
• W2122097942 title "Multidimensional CMOS in-plane stress sensor" @default.
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• W2122097942 doi "https://doi.org/10.1109/icsens.2003.1278936" @default.
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