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- W2122710121 abstract "Device characteristics of double heterostructure lasers with Al <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.4</inf> Ga <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.6</inf> As confinement layers and GaAs <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.99</inf> Sb <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.01</inf> active layers are presented. Average emission wavelengths have been increased from 0.87 μm for undoped active layers to 0.88 μm for <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2 times 10^{17}</tex> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-3</sup> Ge doped active layers with a wash melt preceding the growth of the active layer and to 0.89 μ for <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1 times 10^{18}</tex> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-3</sup> Mg doped active layers grown following a wash melt. Threshold currents for lasers from 21 wafers are examined for several growth conditions and compared with Al <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.08</inf> Ga <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.92</inf> As active layer devices. Device resistance, external quantum efficiency, device degradation, and pulsed and CW threshold currents as a function of temperature are also discussed." @default.
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- W2122710121 title "Device characteristics of (Al,Ga)As lasers with Ga(As,Sb) active layers" @default.
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