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• W2122716673 abstract "A1. Anisotropic magnetoresistance A2. Single crystal growth A3. Molecular beam epitaxy B2. Fe3Si B2. GaAs B2. Spintronics abstract This work reports the magneto-anisotropy property of epitaxial Fe3Si film grown on GaAs (0 0 1) substrate by molecular beam epitaxy (MBE). We present a strong dependence of anisotropic magnetoresistance (MR) on field in the Fe3Si film plane. The electron transport behavior is highly dependent on the direction of the current either parallel or perpendicular to the magnetic easy axis. By altering the direction of current from magnetic hard axis to magnetic easy axis, the unconventional behavior switches to normal anisotropic magnetoresistance (AMR). In addition, the anisotropic behaviors were also observed from the magneto-optic Kerr effect (MOKE) measurement, which demonstrates unusual anisotropic properties with the crystalline anisotropic constant K1¼(3.87 0.2) � 10 4 erg/cm 3 and uni-axial anisotropy" @default.
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• W2122716673 date "2011-05-01" @default.
• W2122716673 modified "2023-10-16" @default.
• W2122716673 title "Strong crystal anisotropy of magneto-transport property in Fe3Si epitaxial film" @default.
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• W2122716673 doi "https://doi.org/10.1016/j.jcrysgro.2010.11.075" @default.
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