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- W2122746250 abstract "MeV ion implantation has been recently employed in the field of CMOS (complementary metal oxide semiconductor) retrograde well engineering. An issue on MeV ion induced damage is critical especially in forming a buried layer below the well. MeV B implanted buried layers were observed to show greatly improved characteristics of latchup suppression. Junction leakage current, however, showed a critical behavior as a function of ion dose. The rod-like defects were observed to be responsible for the leakage current. Rod-like defects were generated near the R/sub p/ (projected range) region and grown upward to the surface during annealing. According to cross sectional examination of etch pit density, they were generated and propagated between 700/spl deg/C and 800/spl deg/C. They shrink or change into long, elongated dislocation loops at higher temperatures above 900/spl deg/C. Results of SIMS (secondary ion mass spectroscopy) analyses and two-step-annealing (700/spl deg/C/3/spl sim/6 hrs./spl rarr/900/spl deg/C/1 hr.) indicate that interstitial oxygens impede shrinkage of existing rod-like defects at higher temperatures above 900/spl deg/C." @default.
- W2122746250 created "2016-06-24" @default.
- W2122746250 creator A5026474558 @default.
- W2122746250 creator A5028235370 @default.
- W2122746250 creator A5062000067 @default.
- W2122746250 date "2002-11-28" @default.
- W2122746250 modified "2023-09-26" @default.
- W2122746250 title "A study on the defects in the fabrication of CMOS retrograde well including a buried layer using MeV ion implantation" @default.
- W2122746250 cites W1978609155 @default.
- W2122746250 cites W1999849146 @default.
- W2122746250 cites W2008126959 @default.
- W2122746250 cites W2030676345 @default.
- W2122746250 cites W2054872884 @default.
- W2122746250 cites W2081707544 @default.
- W2122746250 cites W2082864020 @default.
- W2122746250 cites W2087783518 @default.
- W2122746250 cites W2319988448 @default.
- W2122746250 cites W280137611 @default.
- W2122746250 doi "https://doi.org/10.1109/iit.1998.813837" @default.
- W2122746250 hasPublicationYear "2002" @default.
- W2122746250 type Work @default.
- W2122746250 sameAs 2122746250 @default.
- W2122746250 citedByCount "0" @default.
- W2122746250 crossrefType "proceedings-article" @default.
- W2122746250 hasAuthorship W2122746250A5026474558 @default.
- W2122746250 hasAuthorship W2122746250A5028235370 @default.
- W2122746250 hasAuthorship W2122746250A5062000067 @default.
- W2122746250 hasConcept C113196181 @default.
- W2122746250 hasConcept C136525101 @default.
- W2122746250 hasConcept C142724271 @default.
- W2122746250 hasConcept C145148216 @default.
- W2122746250 hasConcept C159985019 @default.
- W2122746250 hasConcept C178790620 @default.
- W2122746250 hasConcept C185592680 @default.
- W2122746250 hasConcept C191897082 @default.
- W2122746250 hasConcept C192562407 @default.
- W2122746250 hasConcept C204787440 @default.
- W2122746250 hasConcept C2777855556 @default.
- W2122746250 hasConcept C2779851234 @default.
- W2122746250 hasConcept C41823505 @default.
- W2122746250 hasConcept C43617362 @default.
- W2122746250 hasConcept C46362747 @default.
- W2122746250 hasConcept C49040817 @default.
- W2122746250 hasConcept C544956773 @default.
- W2122746250 hasConcept C71924100 @default.
- W2122746250 hasConceptScore W2122746250C113196181 @default.
- W2122746250 hasConceptScore W2122746250C136525101 @default.
- W2122746250 hasConceptScore W2122746250C142724271 @default.
- W2122746250 hasConceptScore W2122746250C145148216 @default.
- W2122746250 hasConceptScore W2122746250C159985019 @default.
- W2122746250 hasConceptScore W2122746250C178790620 @default.
- W2122746250 hasConceptScore W2122746250C185592680 @default.
- W2122746250 hasConceptScore W2122746250C191897082 @default.
- W2122746250 hasConceptScore W2122746250C192562407 @default.
- W2122746250 hasConceptScore W2122746250C204787440 @default.
- W2122746250 hasConceptScore W2122746250C2777855556 @default.
- W2122746250 hasConceptScore W2122746250C2779851234 @default.
- W2122746250 hasConceptScore W2122746250C41823505 @default.
- W2122746250 hasConceptScore W2122746250C43617362 @default.
- W2122746250 hasConceptScore W2122746250C46362747 @default.
- W2122746250 hasConceptScore W2122746250C49040817 @default.
- W2122746250 hasConceptScore W2122746250C544956773 @default.
- W2122746250 hasConceptScore W2122746250C71924100 @default.
- W2122746250 hasLocation W21227462501 @default.
- W2122746250 hasOpenAccess W2122746250 @default.
- W2122746250 hasPrimaryLocation W21227462501 @default.
- W2122746250 hasRelatedWork W1991582195 @default.
- W2122746250 hasRelatedWork W2028697006 @default.
- W2122746250 hasRelatedWork W2054207401 @default.
- W2122746250 hasRelatedWork W2056849864 @default.
- W2122746250 hasRelatedWork W2090138857 @default.
- W2122746250 hasRelatedWork W2102139604 @default.
- W2122746250 hasRelatedWork W2184722214 @default.
- W2122746250 hasRelatedWork W2316370999 @default.
- W2122746250 hasRelatedWork W2329693464 @default.
- W2122746250 hasRelatedWork W2893093161 @default.
- W2122746250 hasRelatedWork W3100901713 @default.
- W2122746250 hasRelatedWork W3114374010 @default.
- W2122746250 hasRelatedWork W45442776 @default.
- W2122746250 hasRelatedWork W2760424100 @default.
- W2122746250 hasRelatedWork W2819729273 @default.
- W2122746250 hasRelatedWork W2832241143 @default.
- W2122746250 hasRelatedWork W2871804852 @default.
- W2122746250 hasRelatedWork W2874260101 @default.
- W2122746250 hasRelatedWork W2878452576 @default.
- W2122746250 hasRelatedWork W3150127988 @default.
- W2122746250 isParatext "false" @default.
- W2122746250 isRetracted "false" @default.
- W2122746250 magId "2122746250" @default.
- W2122746250 workType "article" @default.