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- W2122894920 abstract "For future high-performance reconfigurable logic devices, we developed a novel spin-based MOSFET; ¿Spin-Transfer-Torque-Switching MOSFET (STS-MOSFET)¿ that enables the read/write performance and memorization of the configuration with nonvolatility by using the ferromagnetic electrodes and the spin-polarized current through Si channel and spin-transfer torque switching in magnetic tunnel junctions (MTJs) on the source/drain. The read/write operation of the STS-MOSFET was first demonstrated in this work. The highly spin-polarized ferromagnet/MgO tunnel barrier electrodes and the MTJs using their structure for the source/drain showed great possibility to realize our proposed STS-MOSFET and to enhance their performance." @default.
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- W2122894920 date "2009-12-01" @default.
- W2122894920 modified "2023-10-17" @default.
- W2122894920 title "Read/write operation of spin-based MOSFET using highly spin-polarized ferromagnet/MgO tunnel barrier for reconfigurable logic devices" @default.
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- W2122894920 doi "https://doi.org/10.1109/iedm.2009.5424385" @default.
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