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- W2123058854 abstract "Abstract A thermosensing CMOS circuit that changes its internal voltage steeply at a critical temperature was developed. The circuit is based on a self‐biasing circuit technique and uses the temperature‐sensitive characteristics of MOSFETs operating in the subthreshold region. To develop this sensor device, a method to analyze self‐biasing circuits, which is different from a conventional one, was employed. This method is useful for understanding the self‐biasing circuit operation. A temperature sensor device makes use of a MOSFET resistor's transition from a strong inversion to a weak‐inversion or subthreshold operation. The temperature at which the transition occurs can be set to a desired value by adjusting the parameters of MOSFETs in the circuit. The sensor LSI can be made using a standard CMOS process and can be used as over‐temperature and over‐current protectors for LSI circuits. Copyright © 2009 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc." @default.
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- W2123058854 date "2009-02-25" @default.
- W2123058854 modified "2023-09-25" @default.
- W2123058854 title "A highly sensitive thermosensing CMOS Circuit Based on self-biasing circuit technique" @default.
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- W2123058854 doi "https://doi.org/10.1002/tee.20404" @default.
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