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- W2123109097 abstract "The physical and electrical characteristics of atomic layer deposited RuO2 nanocrystals embedded in high-? HfO2/Al2O3 films in an n-Si/SiO2/HfO2/RuO2/Al2O3/Pt memory structure have been investigated. A small size of <10 nm and high-density of ~ 1.6 × 1012/cm2 for the RuO2 nanocrystals have been observed by high-resolution transmission electron microscope (HRTEM). The RuO2 metal nanocrystals and all high-? films have been confirmed by x-ray photoelectron spectroscopy (XPS). A large hysteresis memory window of ?V?10.8 V at a gate voltage of Vg = ±10 V has been observed for RuO2 nanocrystal memory capacitors. A hysteresis memory window of ?V?2.4 V has also been observed under a small sweeping gate voltage of Vg = ±5 V, due to charge storage in the RuO2 metal nanocrystals. The RuO2 metal nanocrystal memory capacitors have a large breakdown voltage of -15V. A low charge loss of 15% is observed after 10 years of retention." @default.
- W2123109097 created "2016-06-24" @default.
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- W2123109097 date "2008-10-01" @default.
- W2123109097 modified "2023-09-27" @default.
- W2123109097 title "Physical and electrical characteristics of atomic layer deposited RuO<inf>2</inf> nanocrystals for nanoscale nonvolatile memory applications" @default.
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- W2123109097 doi "https://doi.org/10.1109/icsict.2008.4734700" @default.
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