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• W2123210027 abstract "N- and p-MOSFETs have been fabricated in strained Si-on-SiGe-on-insulator (SSOI) with high (15-25%) Ge content. Wafer bonding and H-induced layer transfer techniques enabled the fabrication of the high Ge content SiGe-on-insulator (SGOI) substrates. Mobility enhancement of 50% for electrons (with 15% Ge) and 15-20% for holes (with 20-25% Ge) has been demonstrated in SSOI MOSFETs. These mobility enhancements are commensurate with those reported for FETs fabricated on strained silicon on bulk SiGe substrates." @default.
• W2123210027 created "2016-06-24" @default.
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• W2123210027 date "2002-09-01" @default.
• W2123210027 modified "2023-10-17" @default.
• W2123210027 title "Electron and hole mobility enhancement in strained SOI by wafer bonding" @default.
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• W2123210027 doi "https://doi.org/10.1109/ted.2002.802675" @default.
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