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• W2123233090 abstract "Based on two-dimensional (2-D) numerical simulation, a pulsed-drain current (PDC) measurement technique in weak inversion is investigated as an alternative to the standard charge-pumping technique for the extraction of interface trap density using small geometry MOSFETs. The PDC technique was found particularly useful for small MOSFETs with sub-20 /spl Aring/ oxides to avoid high gate tunneling current effects. The numerical simulation results are in excellent agreement with the simple analytical expressions used in the PDC technique." @default.
• W2123233090 created "2016-06-24" @default.
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• W2123233090 date "2000-01-01" @default.
• W2123233090 modified "2023-09-28" @default.
• W2123233090 title "A two-dimensional numerical simulation of pulsed drain current transients in weak inversion and application to interface trap characterization on small geometry MOSFETs with ultrathin oxides" @default.
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• W2123233090 doi "https://doi.org/10.1109/16.877189" @default.
• W2123233090 hasPublicationYear "2000" @default.
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