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- W2123290436 abstract "The two-dimensional (2-D) channel potential and threshold voltage of the silicon-on-insulator (SOI) four-gate transistor (G <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sup> -FET) are modeled. The 2-D analytical body potential is derived by assuming a parabolic potential variation between the lateral junction-gates and by solving Poisson's equation. The model is used to obtain the surface threshold voltage of the G <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sup> -FET as a function of the lateral gate bias and for all possible charge conditions at the back interface. The body-potential model is extendable to fully depleted SOI MOSFETs and can serve to depict the charge-sharing and drain-induced barrier-lowering effects in short-channel devices" @default.
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- W2123290436 date "2006-10-01" @default.
- W2123290436 modified "2023-10-12" @default.
- W2123290436 title "Analytical modeling of the two-dimensional potential distribution and threshold voltage of the SOI four-gate transistor" @default.
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- W2123290436 doi "https://doi.org/10.1109/ted.2006.882283" @default.
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