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• W2123403294 abstract "A GaAs pseudomorphic HEMT process has been optimised for high performance and yield at W-band. Several key nano-fabrication techniques are explored for performance, manufacturability and process sensitivity. The molecular beam epitaxially grown pHEMT layer is optimised for reduced short channel effects, high transconductance (690 mS/mm) and reliability. Electron-beam lithography produces ultra short T-gates with high reproducibility. Selective reactive ion etching enables both the depth and width of the gate recess to be accurately controlled. 0.2 /spl mu/m pHEMTs with two 50 /spl mu/m gate fingers exhibit average values for f/sub T/ and f/sub max/ of 121 and 157 GHz with low standard deviations of 4.6 and 2.9 GHz respectively. >" @default.
• W2123403294 created "2016-06-24" @default.
• W2123403294 creator A5012432834 @default.
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• W2123403294 date "2002-11-19" @default.
• W2123403294 modified "2023-09-26" @default.
• W2123403294 title "A high performance, high yield, dry-etched, pseudomorphic HEMT for W-band use" @default.
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• W2123403294 doi "https://doi.org/10.1109/mwsym.1995.405952" @default.
• W2123403294 hasPublicationYear "2002" @default.
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