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- W2123451608 abstract "In this paper, we propose a novel S/D engineering for dual-gated Bilayer Graphene (BLG) Field Effect Transistor (FET) using doped semiconductors (with a bandgap) as source and drain to obtain unipolar complementary transistors. To simulate the device, a self-consistent Non-Equilibrium Green's Function (NEGF) solver has been developed and validated against published experimental data. Using the simulator, we predict an on-off ratio in excess of $10^4$ and a subthreshold slope of ~110mV/decade with excellent scalability and current saturation, for a 20nm gate length unipolar BLG FET. However, the performance of the proposed device is found to be strongly dependent on the S/D series resistance effect. The obtained results show significant improvements over existing reports, marking an important step towards bilayer graphene logic devices." @default.
- W2123451608 created "2016-06-24" @default.
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- W2123451608 date "2010-12-01" @default.
- W2123451608 modified "2023-09-27" @default.
- W2123451608 title "High on-off ratio Bilayer Graphene complementary field effect transistors" @default.
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- W2123451608 doi "https://doi.org/10.1109/iedm.2010.5703464" @default.
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