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• W2123722166 abstract "The device performance of sensitizer-architecture solar cells based on a CuSbS2 light sensitizer is presented. The device consists of F-doped SnO2 substrate/TiO2 blocking layer/mesoporous TiO2/CuSbS2/hole-transporting material/Au electrode. The CuSbS2 was deposited by repeated cycles of spin coating of a Cu-Sb-thiourea complex solution and thermal decomposition, followed by annealing in Ar at 500 °C. Poly(2,6-(4,4-bis-(2-ethylhexyl)-4H-cyclopenta[2,1-b;3,4-b′]dithiophene)-alt-4,7(2,1,3-benzothiadiazole)) (PCPDTBT) was used as the hole-transporting material. The best-performing cell exhibited a 3.1 % device efficiency, with a short-circuit current density of 21.5 mA cm−2, an open-circuit voltage of 304 mV, and a fill factor of 46.8 %." @default.
• W2123722166 created "2016-06-24" @default.
• W2123722166 creator A5031258227 @default.
• W2123722166 creator A5040160839 @default.
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• W2123722166 date "2015-02-03" @default.
• W2123722166 modified "2023-09-27" @default.
• W2123722166 title "CuSbS₂-Sensitized Inorganic-Organic Heterojunction Solar Cells Fabricated Using a Metal-Thiourea Complex Solution" @default.
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• W2123722166 doi "https://doi.org/10.1002/anie.201411329" @default.
• W2123722166 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/25650302" @default.
• W2123722166 hasPublicationYear "2015" @default.
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