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• W2123932887 abstract "Titanium dioxide (TiO 2 ) thin films were prepared on silicon substrates by plasma-enhanced chemical vapor deposition (PECVD) using Ti(OiC 3 H 7 ) 4 and oxygen. PECVD of TiO 2 films has been evaluated with various process parameters. The characteristics of films were investigated by X-ray diffraction, scanning electron microscopy, TG/DTA, FTIR, UV/visible spectroscopy and Auger electron spectroscopy. Typical as-deposited film was amorphous and transparent with a refractive index of 2.05. As the deposition time increased, surface morphology became coarser, and structure was transformed from amorphous to mixtures of amorphous and crystal. As-deposited amorphous TiO 2 films had a dielectric constant of 13.7 and flat-band voltage of −1.3 V. The effects of post-treatment through N 2 or O 2 plasma on the electrical properties of as-deposited films were evaluated. Electrical properties could be enhanced by O 2 plasma treatment." @default.
• W2123932887 created "2016-06-24" @default.
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• W2123932887 date "1994-01-01" @default.
• W2123932887 modified "2023-10-18" @default.
• W2123932887 title "Preparation and properties of amorphous TiO2 thin films by plasma enhanced chemical vapor deposition" @default.
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• W2123932887 doi "https://doi.org/10.1016/0040-6090(94)90245-3" @default.
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